any changing of specification will not be informed individual MMDT3904 npn silicon multi-chip transistor rohs compliant product http://www.secosgmbh.com elektronische bauelemente p a r a m e t e r sy mbol t e st conditions min max unit power dissipation marking: k6n or ma electrical characteristics ( tamp.=25 c unless otherwise specified) p cm : 0.2 w (tamp.= 25 c) collector current i cm : 0.2 a collector-base voltage v (br)cbo : 60 v operating & storage junction temperature t j , t stg : -55 c~ +150 c o o o o * features collector-base breakdown voltage v (br)cbo ic= 10 a i e =0 60 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma i b =0 40 v emitter-base breakdown voltage v (br)ebo i e = 10 a i c =0 5 v collector cut-off current i cbo v cb = 30 v , i e =0 0.05 a collector cut-off current i ceo v ce = 30 v , i b =0 0.05 a emitter cut-off current i ebo v eb = 5v , i c =0 0.05 a h fe 1 v ce = 1v, i c = 10ma 100 300 dc current gain h fe 2 v ce = 1v, i c = 50ma 60 collector-emitter saturation voltage v ce (sat) i c =50 ma, i b = 5ma 0.3 v base-emitter saturation voltage v be (sat) i c = 50 ma, i b = 5ma 0.95 v transition frequency f t v ce = 20v, i c = 10ma f= 100mhz 300 mhz output capacitance c ob v cb =5v, i e = 0 f= 1mhz 4 pf delay time t d 35 ns rise time t r v cc =3v, v be =0.5v i c =10ma , i b1 =1ma 35 ns storage time t s 200 ns fall time t f v cc =3v, i c =10ma i b1 = i b2 = 1ma 50 ns 06-may-2010 rev. c page 1 of 2 c 2 b 1 e 1 e 2 b 2 c 1 sot-363 dimensions in inches and (millimeters) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .055(1.40) .047(1.20) .026typ (0.65typ) .096(2.45) .085(2.15) .021ref (0.525)ref .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35 .045(1.15 .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) 8 o o 0 a suffix of "-c" specifies halogen & lead-free
any changing of specification will not be informed individual MMDT3904 npn silicon multi-chip transistor http://www.secosgmbh.com elektronische bauelemente 0 5 1 5 10 0.1 1 10 100 c , input capacitance (pf) ibo c , output capacitance (pf) obo v , collector-base voltage (v) cb fig. 2, input and output capacitance vs. collector-base volta g e cibo cobo f=1mhz 0 50 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 100 150 200 0 0.01 0.1 1 0.1 1 10 100 1000 v , collector-emitter (v) ce(sat) saturation voltage i , collector current (ma) c fig. 4, typical collector-emitter saturation volta g e vs. collector current i c i b =10 1 10 1000 100 0.1 1 10 1000 100 h , dc current gain fe i , collector current (ma) c fig. 3, typical dc current gain vs collector current t = -25c a t = +25c a t = 125c a v = 1.0v ce 0.1 1 10 0.1 1 10 100 1000 v , base-emitter (v) be(sat) saturation voltage i , collector current (ma) c fig. 5, typical base-emitter saturation volta g e vs. collector current i c i b =10 _ 06 -may-2010 rev.c page 2 of 2
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